Flash memory giant Kaixia is about to release three major innovative research results

Recently, Kioxia announced on its official website that multiple innovative research achievements will be presented at the IEEE International Electronic Devices Conference (IEDM) in San Francisco, USA from December 7th to 11th, 2024. Recently, Kioxia announced on its official website that multiple innovative research achievements will be presented at the IEEE International Electronic Devices Conference (IEDM) in San Francisco, USA from December 7th to 11th, 2024.

It is reported that this release includes three innovative technologies, namely oxide semiconductor channel transistor DRAM (OCTRAM), high-capacity cross point MRAM (magnetoresistance random access memory) technology, and next-generation 3D storage technology with horizontal cell stack structure.

Oxide semiconductor channel transistor DRAM (OCTRAM): This technology is jointly developed by Kaixia and South Asia Technology. By improving the manufacturing process, a vertical transistor has been developed to enhance circuit integration. OCTRAM technology is expected to significantly reduce the power consumption of DRAM, making it have broad application prospects in fields such as artificial intelligence and 5G communication.

High Capacity Cross Point MRAM (Reluctance Random Access Memory) Technology: Developed in collaboration with SK Hynix, this high-capacity cross point MRAM technology achieves industry-leading cell density by combining high-density selectors with magnetic tunnel junctions. At the same time, the technology also adopts innovative readout methods, effectively reducing read interference and improving the reliability of the memory. This technology has enormous potential for applications in fields such as artificial intelligence and big data processing. MRAM is considered to have the potential to replace existing storage technologies in various application fields due to its non-volatile, high-speed read and write, unlimited write times, and high reliability characteristics. The basic unit of MRAM is the magnetic tunnel junction (MTJ), which utilizes the material's magnetic resistance changes to store data.

The next generation 3D storage technology with horizontal cell stacking structure: Kaixia's independently developed next-generation 3D flash memory technology adopts a horizontal cell stacking structure, which has higher bit density and reliability compared to traditional vertical stacking structures. This innovation is expected to further enhance the storage capacity and performance of flash memory, meeting the growing demand for future data storage. 3D DRAM significantly reduces the size of DRAM cells through vertical stacking technology, improving energy efficiency while reducing cell area. This technology is expected to become a key factor in driving DRAM miniaturization, meeting the growing storage demands and performance requirements.